Contents:
Readership: Condensed matter physicists.
- Crystalline Ion Implantation Simulation (R Webb)
- The Latest News in Ion Implantation Equipment (M Setvak)
- Ion Beam Technology for Production VLSI/ULSI Semiconductor Doping (N R White)
- Simulation of Crater Effects During SIMS Depth Profiling (S Tzanev et al)
- High Tc Superconductors and Particle Beams (M Subotowicz)
- Formation of a Nitride Layer Between an Epitaxial Silicide Layer and the Silicon Substrate (J Danilovich et al)
- Formation of Stoichiometric Silicon Nitride Films during Ion Implantation (P A Aleksandrov)
- Structure and Phase Transformation During Highly Intensitive Ion Implantation of Silicon (F F Komarov et al)
- Ion Beam Modification of Polyimide Films (E F Ostretsov et al)
- Heterogeneous Amorphization of Cd-Implanted GaAs at Room Temperature (J Krynicki et al)
- Ion Assisted Processes at the Surfaces of Solids, Condensation and Modification of Thin Solid Film Properties (V G Babaev et al)
- Recoil Implantation of In, Ag, Cu into Stainless Steel (M Sowa et al)
- and other papers
Readership: Condensed matter physicists.
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