A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi
Pages: 440
Category: Ingenjörsvetenskap
e-ISBN: 9781040070567
Shipping weight: 1.2 kg
Ships in: 1-2 days
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