ION IMPLANTATION & ION BEAM   EQUIPMENT

ION IMPLANTATION & ION BEAM EQUIPMENT

Autor: Karpuzov D S
Wydawca: World Scientific Publishing Company
Data publikacji: 1991
ISBN: 9814539260

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Contents:
  • Crystalline Ion Implantation Simulation (R Webb)
  • The Latest News in Ion Implantation Equipment (M Setvak)
  • Ion Beam Technology for Production VLSI/ULSI Semiconductor Doping (N R White)
  • Simulation of Crater Effects During SIMS Depth Profiling (S Tzanev et al)
  • High Tc Superconductors and Particle Beams (M Subotowicz)
  • Formation of a Nitride Layer Between an Epitaxial Silicide Layer and the Silicon Substrate (J Danilovich et al)
  • Formation of Stoichiometric Silicon Nitride Films during Ion Implantation (P A Aleksandrov)
  • Structure and Phase Transformation During Highly Intensitive Ion Implantation of Silicon (F F Komarov et al)
  • Ion Beam Modification of Polyimide Films (E F Ostretsov et al)
  • Heterogeneous Amorphization of Cd-Implanted GaAs at Room Temperature (J Krynicki et al)
  • Ion Assisted Processes at the Surfaces of Solids, Condensation and Modification of Thin Solid Film Properties (V G Babaev et al)
  • Recoil Implantation of In, Ag, Cu into Stainless Steel (M Sowa et al)
  • and other papers

Readership: Condensed matter physicists.

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