ION IMPLANTATION & ION BEAM EQUIPMENT

Name: Memmo
Address: Artillerigatan 27, Stockholm, 11445, SE
Telephone: +46762762674

Autor: Karpuzov D S

Editorial: World Scientific Publishing Company

Fecha de publicación: 1991

ISBN: 9814539260

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Contents:

Crystalline Ion Implantation Simulation (R Webb)
The Latest News in Ion Implantation Equipment (M Setvak)
Ion Beam Technology for Production VLSI/ULSI Semiconductor Doping (N R White)
Simulation of Crater Effects During SIMS Depth Profiling (S Tzanev et al)
High T_c Superconductors and Particle Beams (M Subotowicz)
Formation of a Nitride Layer Between an Epitaxial Silicide Layer and the Silicon Substrate (J Danilovich et al)
Formation of Stoichiometric Silicon Nitride Films during Ion Implantation (P A Aleksandrov)
Structure and Phase Transformation During Highly Intensitive Ion Implantation of Silicon (F F Komarov et al)
Ion Beam Modification of Polyimide Films (E F Ostretsov et al)
Heterogeneous Amorphization of Cd-Implanted GaAs at Room Temperature (J Krynicki et al)
Ion Assisted Processes at the Surfaces of Solids, Condensation and Modification of Thin Solid Film Properties (V G Babaev et al)
Recoil Implantation of In, Ag, Cu into Stainless Steel (M Sowa et al)
and other papers

Readership: Condensed matter physicists.

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