DENSITY-OF-STATES FUNCTION & RELATED APPLN QUANTIZED STRUC

In recent years there has been considerable interest in studying the DENSITY-OF-STATES (DOS) functions and Related Applications in Quantized Structures of different technologically important materials in low dimensional electronics. The concept of DOS function is of fundamental importance for not only the characterization of semiconductor nanostructures but also in the study of the carrier transport in quantum effect devices. The acoustic mobility limited momentum relaxation time is inversely proportional to the respective DOS function of a particular semiconductor and the DOS function, in turn, is connected to the twenty five important transport topics of quantum effect devices namely the Landau Dia and Pauli's Para Magnetic Susceptibilities, the Einstein's Photoemission, the Einstein Relation, the Debye Screening Length, the Generalized Raman gain, the Normalized Hall coefficient, the Fowler-Nordheim Field Emission, the Gate Capacitance, the Thermoelectric Power, the Plasma Frequency, the Magneto-Thermal effect in Quantized Structures, the Activity coefficient, the Reflection coefficient, the Heat Capacity, the Faraday rotation, the Optical Effective Mass, the Carrier contribution to the elastic constants, the Diffusion coefficient of the minority carriers, the Nonlinear optical response, the Third order nonlinear optical susceptibility, the Righi-Leduc coefficient, the Electric Susceptibility, the Electric Susceptibility Mass, the Electron Diffusion Thermo-power and the Hydrostatic Piezo-resistance Coefficient respectively.

This first-of-a-kind monograph investigates the DOS function and the aforementioned applications in quantized structures of tetragonal and non-linear optical, III-V, II-VI, Gallium Phosphide, Germanium, Platinum Antimonide, stressed, IV-VI, Lead Germanium Telluride, II-V, Zinc and Cadmium diphosphides and Bismuth Telluride respectively. We have also formulated the same and the allied physical properties of III-V, II-VI, IV-VI and HgTe/CdTe quantum well Heavily Doped (HD) superlattices with graded interfaces under magnetic quantization, III-V, II-VI, IV-VI and HgTe/CdTe HD effective mass superlattices under magnetic quantization, quantum confined effective mass superlattices and superlattices of HD optoelectronic materials with graded interfaces in addition to other quantized structures respectively.

This book covers from elementary applications in the first chapter up to rather advanced investigations in the later chapters. We have suggested experimental determinations of the Einstein relation for the Diffusivity-Mobility ratio, the Debye screening length and Elastic Constants in various types of quantized structures under different physical conditions. This book contains 222 current open research problems which form an integral part of the text and are useful for both aspiring students and researchers. It is written for graduate / post graduate students, engineers and professionals in the fields of condensed matter physics, solid state sciences, materials science, nanoscience, nanotechnology and nanostructured materials in general and this book will be invaluable to all those researching in academic and industrial laboratories in the said cases worldwide.

Contents:

• The DOS Functions and Einstein's Photoemission in Semiconductors Having Parabolic Energy Bands Under Different Physical Conditions
• The DOS Functions in QWs of HD Non-Parabolic Materials, EFM and the DSL
• The DOS Functions in NWs of HD Non-Parabolic Materials and the Einstein Relation for the DMR
• The DOS Functions in QDs of Non-Parabolic Materials and the EP
• The DOS Functions in HD Doping Superlattices of Non-Parabolic Materials, the EFM and the DMR
• The DOS Functions in MOSFETs under Accumulation and Inversion Modes of Operation of Non-Parabolic Materials and the Quantum Capacitance
• The DOS Function in HD Non-Parabolic Materials Under Magnetic Quantization and the MTP
• The Integrated DOS Function in HDs Under Cross-Field Configuration and the Electric Constants
• The DOS Functions in HD Non-Parabolic Materials Under Magneto-Size Quantization and the RLC
• The Integrated DOS Function in HD QWs Under Cross-Fields Configuration and the EFM
• The DOS Function in Doping Superlattices of HD Non-Parabolic Materials Under Magnetic Quantization and the AC
• The DOS Function in MOSFETs and QMOSFETs of Non-Parabolic Materials under Magnetic Quantization and the QC
• The DOS Function in QWHDSLs and the SE
• The DOS Function in Nanowire HDSLs and the FNFE
• The DOS Function in QD HDSLs and the EP
• The DOS Function in HDSLs under Magnetic Quantization and Einstein's Photoemission
• The DOS Function in QWHDSLs under Magnetic Quantization and Einstein's Photoemission
• The DOS Function under Photoexcitation in HD Kane-type Materials and the ECs
• The DOS Function under Intense Electric Field in HD Kane-type Materials and the Relaxation Time Due to AMS
• The DOS Function in Fibonacci Superlattices and the Fermi Energy
• The DOS in Superlattices Under Tight Binding Approximations for Different Physical Conditions and the EDTP
• The DOS in Heavily Doped Superlattices Under Tight Binding Approximation for Different Physical Conditions and the EFM
• The DOS in SuperLattices Under Tight Binding Approximations in the Presence of Light Waves for Different Physical Conditions and the DEQ
• The DOS in HD SuperLattices Under Tight Binding Approximations in the Presence of Light Waves for Different Physical Conditions and the DEQ
• The Generalized Distribution Functions in Heavily Doped Materials
• Conclusion and Scope for Future Research
• Appendices:
  • The DOS Function in Cylindrical QDs of HD III–V Materials in the Presence of Crossed Electric and Magnetic Fields
  • The Dimension-dependent DOS Function and the Radiation Laws
  • Einstein's 1D Photoemission and the Klaus von Klitzing Constant
  • Einstein's Photoemission and the Richardson–Dushman Formula
  • The Simplest Derivation of Einstein's E = mc² without Using Relativity for only Photons and Under Stationary Frame of Reference

Readership: This book contains over 200 current open research problems which form an integral part of the text and are useful for both PhD aspirants and researchers. It is written for graduate/ post graduate students, engineers and professionals in the fields of condensed matter physics, solid state sciences, materials science, nanoscience, nanotechnology and nano structured materials in general and this book will be invaluable to all those researching in academic and industrial laboratories in the said cases worldwide.